All of Wafer
SOI wafer


Buysemi supply Silicon On Insulator (SOI) wafers.


The following glass wafers are available :



Top silicon wafer specification


  Size

  4 ", 6" or 8 "

  Type/Dopant

  P /Boron or N /Phous , N/As , N/sb or Undopped

  Orientation of Substrate crystal

  <100> , <111> , <110>

  Resistance value

 ​ Low resistance (<0.005 ohm.cm), general resistance (1-100 ohm.cm)

  Thickness

  Thickness (> 2um or A units)

  Surface condition

  Single or double sided Polish

  Tolerance of thickness

  ±0.5um or ±1um

 ​ Grade 

  Test , Prime




■ Specification of Intermediate layer silicon oxide (SiO2)

  Silicon thickness

  200A~tens ofum

  Method of silicon growth

  Dry thermal oxidation process or wet themal oxidation process





■ Specification of Lowmost silicon wafer


  Size

  4 ", 6" or 8 "

  Type/Dopant

  P /Boron or N /Phous , N/As , N/sb or Undopped

  Orientation of Substrate crystal

  <100> , <111> , <110>

  Resistance value

 ​ Low resistance (<0.005ohm.cm ), General resistance (1-100ohm.cm)

  High resistance (>1kohm.cm)

  Thickness

  Thickness (>200um )

  Surface condition

  Single or double side polishing

  Tolerance of thickness

  ±0.5um or ±1um

 ​ Grade 

  Test , Prime





SOI wafer process (limited to 4", 6", 8")


  Size control

  Customize through Dicing process: 5mm*5mm, 10mm*10mm, etc.

  Silicon deposition (SiO2)

  Thermal oxidation process (200A~Tens of um)

  PECVD 

  RF Sputtering & DC Sputtering all metal

  Si3N4 deposition

  LPCVD Standard Si3N4 , Low Stress , Thickness of thin film : 1,000A~2um

  Metal deposition

  DC& RF Sputtering , Evaporation

  Patterning process

  Dry etching , Deep Si Etching , Lift off 







soi-wafer_123.jpg